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RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.
FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
APPLICATION: For output stage of high power amplifiers in HF band.
MFR: Mitsubishi, Japan
SKU: RD16HHF1-501
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