MRF581G Microsemi Transistor (NOS)

$3.91
In stock
SKU
MRF581G-MSC
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount

No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF581G-MSC

MRF581G Microsemi NPN Transistor 5GHz  1.25W (NOS)

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount

No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi

More Information
Call For Price No
Featured Product No
Made in the USA No
NOS No
Manufacturer Name FUTURE ELECTRONICS CORP
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