MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)

MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)

Depletion mode dual-gate MES FET designed for high frequency amplifier and mixer applications.

• Excellent Receiver Front End
• Low Noise Figure- NF= 1.2 dB, 1 GHz (Typ)
• High Power Gain- G_p= 17 dB, 1 GHz (Typ)
• Fully Characterized
• Gold Metallization

New Old Stock * No longer available for export
MFR: Motorola