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1-800-RFPARTS (1-800-737-2787)
1-760-744-0700 (USA)
ORDERS: rfp@rfparts.com
435 S PACIFIC ST SAN MARCOS, CA 92078
RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor16W 30 MHz 12.5V
$8.21
In stock
SKU
RD16HHF1-501
- Buy 10 for $7.80 each and save 5%
- Buy 50 for $7.41 each and save 10%
- Buy 100 for $7.04 each and save 14%
- Buy 250 for $6.69 each and save 19%
RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.
FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
APPLICATION: For output stage of high power amplifiers in HF band.
MFR: Mitsubishi, Japan
SKU: RD16HHF1-501
RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor16W 30 MHz 12.5V RoHS Compliant
DESCRIPTION: RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.
FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
APPLICATION: For output stage of high power amplifiers in HF band.
RoHS COMPLIANT
RD16HHF1-501 is a RoHS compliant product.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions: .Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
MFR: Mitsubishi, Japan
| Call For Price | No |
|---|---|
| Featured Product | Yes |
| Made in the USA | No |
| NOS | No |
| Manufacturer Name | Mitsubishi |