RD06HVF1 Mitsubishi Transistor 6W 175 MHz 12.5V (NOS)

RD06HVF1 Mitsubishi Silicon MOSFET Power Transistor 175 MHz 6W (NOS)

• RD06HVF1 is a MOS FET type transistor specifically designed for VHF, RF power amplifier applications.
• High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
• For output stage of high power amplifiers in VHF band mobile radio sets.
• RD06HVF1-101 is a RoHS compliant.  RoHS compliance is indicate by the letter “G” after the lot marking.

New Old Stock * No longer available for export
MFR: Mitsubishi, Japan