RD100HHF1-101 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V (NOS)

RD100HHF1-101 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

• High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band.
• For output stage of high power amplifiers in HF Band mobile radio sets.
• RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.

New Old Stock * No longer available for export
MFR: Mitsubishi, Japan