High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • These Devices are Pb−Free and are RoHS Compliant
MFR: ON Semiconductors
&nbs2N3771G ON Semiconductor Transistor NPN 40V 30Ap;SKU: 2N3771G-ON
2N3771G ON Semiconductor Transistor NPN 40 Volts 30 A Rohs Compliant CASE: TO-3
High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • These Devices are Pb−Free and are RoHS Compliant