BF998 Silicon N-channel dual-gate MOS-FETs

BF998 Silicon N-channel dual-gate, MOS-FETs

FEATURES  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS  VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.