BLV99 Transistor, Philips

BLV99/SL Transistor

MFR: Philips

Limited Quantity Available, NOS

BLV99/SL
Bipolar NPN UHF-Microwave Transisitor
V(BR)CEO (V)=27
V(BR)CBO (V)=50
I(C) Abs.(A) Collector Current=200m
Absolute Max. Power Diss. (W)=6.0
I(CBO) Max. (A)=2.0m
@V(CBO) (V) (Test Condition)=27
h(FE) Min. Static Current Gain=25
@I(C) (A) (Test Condition)=150m
@V(CE) (V) (Test Condition)=20
Power Gain Min. (dB)=8.0
@V(CE) (V) (Test Condition)=24
@Freq. (Hz) (Test Condition)=900M
Semiconductor Material=Silicon
C(obo) (Max) (F)=3.0p
@Freq. (Hz) (Test Condition)=1.0M
Package=SOT-172D
Military=N