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1-800-RFPARTS (1-800-737-2787)
1-760-744-0700 (USA)
ORDERS: rfp@rfparts.com
435 S PACIFIC ST SAN MARCOS, CA 92078
F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)
$35.91
In stock
SKU
F2012
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
SKU: F2012
F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)
MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
NOTE: See Data Sheet for more info.
| Call For Price | No |
|---|---|
| Featured Product | No |
| Made in the USA | No |
| NOS | No |
| Manufacturer Name | Polyfet |