IRF510 Transistor, 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

IRF510 Transistor, 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor, is an advanced power MOSFET.  It is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.