MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COM
TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.) • Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.) • 100% tested for load mismatch at all phase angles
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.). Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)