Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET
Guaranteed performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB typ.), Efficiency = 55% Min. (60% typ.)
Low thermal resistance
Ruggedness tested at rated output power
Nitride passivated die for enhanceed reliability
Low noise figure — 1.5 dB typ. at 2.0 A, 150 MHz
Excellent thermal stability; suited for Class A operation