MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

$243.91

In stock

SKU

MRF275G-MA

Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode

Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
100% tested for load mismatch at all phase angles with VSWR 30:1
Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
Simplified AVC, ALC and modulation
Typical data for power amplifiers in industrial and commercial applications:
Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%

MRF: M/A-COM
MRF275G-MA

MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode

Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
100% tested for load mismatch at all phase angles with VSWR 30:1
Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
Simplified AVC, ALC and modulation
Typical data for power amplifiers in industrial and commercial applications:
Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%

MRF: M/A-COM