Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment.
New Old Stock * No longer available for export MFR: Motorola SKU: MRF5003
MRF5003 Motorola RF Power Field Effect Transistor RF MOSFET N–Channel Enhancement–Mode 512 MHz 7.5V 3.0W
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment.
Guaranteed Performance at 512 MHz, 7.5 Volts: Output Power = 3.0 Watts, Power Gain = 9.5 dB, Efficiency = 45%
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
All Gold Metal for Ultra Reliability
Capable of Handling 20:1 VSWR, at 15.5 Vdc, 512 MHz, 2.0 dB Overdrive
Suitable for 12.5 Volt Applications
True Surface Mount Package
New Old Stock * No longer available for export MFR: Motorola