Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
Silicon PNP, high Frequency, high breakdown, Transistor
Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
High FT - 1400 MHz
No longer manufactured New Old Stock * No longer available for export MFR: Microsemi SKU: MRF545-MSC
MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
Silicon PNP, high Frequency, high breakdown, Transistor
Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
High FT - 1400 MHz
No longer manufactured New Old Stock * No longer available for export MFR: Microsemi