MRF555 Microsemi RF and Microwave Discrete Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)

$6.91
In stock
SKU
MRF555-MSC

Designed primarily for wideband large signal stages in the UHF frequency range.

  • Specified @ 12.5 V, 470 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11 dB, Efficiency 60% (Typ)
  • Cost Effective PowerMacro Package
  • Electroless Tin Plated Leads for Improved Solderability

New Old Stock * No longer available for export
MFR: Microsemi

MRF555 Microsemi RF and Microwave Discrete Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)

Designed primarily for wideband large signal stages in the UHF frequency range.

  • Specified @ 12.5 V, 470 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11 dB, Efficiency 60% (Typ)
  • Cost Effective PowerMacro Package
  • Electroless Tin Plated Leads for Improved Solderability

New Old Stock * No longer available for export
MFR: Microsemi

More Information
Call For Price No
Featured Product No
Made in the USA No
NOS No
Manufacturer Name Microsemi
© 1998-2024 RF Parts Company. All Rights Reserved.