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MRF555 Microsemi RF and Microwave Discrete Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 470 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Microsemi
MRF555 Microsemi RF and Microwave Discrete Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 470 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Microsemi
More Information
Call For Price |
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Featured Product |
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Made in the USA |
No |
NOS |
No |
Manufacturer Name |
Microsemi |
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