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MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)
-
Buy 25 for
$2.76
each and save 29%
-
Buy 100 for
$2.62
each and save 33%
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Packa
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MRF: APT
SKU: MRF557-APT
MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Packa
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MRF: APT
More Information
Call For Price |
No |
Featured Product |
No |
Made in the USA |
No |
NOS |
No |
Manufacturer Name |
FUTURE ELECTRONICS CORP |
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