MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

• Low Noise - 2.5 dB @ 500 MHZ
• Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package

New Old Stock * No longer available for export
MFR: Microsemi