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MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
- Cost Effective Macro X Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF559-MSC
MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870MHz 12V (NOS)
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
- Cost Effective Macro X Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Microsemi
More Information
Call For Price |
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Featured Product |
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Made in the USA |
No |
NOS |
No |
Manufacturer Name |
Microsemi |
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