MRF581A Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

MRF581A Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

• Low Noise - 2.5 dB @ 500 MHZ
• High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package

New Old Stock * No longer available for export
MFR: Microsemi