MRF8372 Motorola NPN Silicon RF Low Power Transistor (NOS)
Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges.
• Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) • State–of–the–Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters • Circuit board photomaster available upon request by contacting
New Old Stock * No longer available for export MFR: Motorola