MRF859 Motorola NPN Silicon RF Power Transistor 6.5 W 24 Vdc (NOS)

MRF859 Motorola NPN Silicon RF Power Transistor 6.5 W 24 Vdc (NOS)

Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz.

• Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics: Output Power = 6.5 Watts CW, Minimum Power Gain = 11.5 dB, Minimum ITO = +47 dBm, Typical Noise Figure = 6 dB
• Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power
• Will Withstand RF Input Overdrive of 2 W CW
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

New Old Stock * No longer available for export
MFR: Motorola