New old Stock * No longer available for export MFR: Mitsubishi
DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz)
APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
RoHS COMPLIANT RD02MUS1-101 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)