DESCRIPTION:RD06HHF1 is a MOS FET type transistor specificallydesigned for HF RF power amplifiers applications.
FEATURES:High power gain:Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION:For output stage of high power amplifiers inHF band mobile radio sets.
RoHS COMPLIANT:RD06HHF1-101 is a RoHS compliant products.RoHS compliance is indicatde by the letter “G” after the lotmarking. This product includes the lead in high melting temperature-type solders.
New Old Stock * No longer available for export MFR: Mitsubishi