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1-800-RFPARTS (1-800-737-2787)
1-760-744-0700 (USA)
ORDERS: rfp@rfparts.com
435 S PACIFIC ST SAN MARCOS, CA 92078
RD07MVS1 Mitsubishi MOSFET Power Transistor Mitsubishi 175MHz 520MHz 7W (NOS)
$12.91
In stock
SKU
RD07MVS1
- Buy 10 for $12.26 each and save 5%
- Buy 25 for $11.64 each and save 10%
- Buy 50 for $11.06 each and save 14%
- Buy 100 for $10.51 each and save 19%
RoHS Compliance Silicon MOSFET Power Transistor 175MHz 520MHz 7W
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD07MVS1
RD07MVS1-T112 Mitsubishi MOSFET Power Transistor 175MHz 520MHz 7W (NOS)
New Old Stock * No longer available for export
MFR: Mitsubishi
RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
- High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
- For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
- RD07MVS1-101, T112 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
"Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than 85% lead."
| Call For Price | No |
|---|---|
| Featured Product | No |
| Made in the USA | No |
| NOS | No |
| Manufacturer Name | Mitsubishi |