RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications
High power and High Gain: Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz High Efficiency: 60%typ.on VHF Band High Efficiency: 55%typ.on UHF Band Integrated gate protection diode
RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications
High power and High Gain: Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz High Efficiency: 60%typ.on VHF Band High Efficiency: 55%typ.on UHF Band Integrated gate protection diode